RF GaN Semiconductor Device Market, Global Outlook and Forecast 2024-2030
The Global RF GaN Semiconductor Device Market Size was estimated at USD 1017.33 million in 2023 and is projected to reach USD 3574.69 million by 2029, exhibiting a CAGR of 23.30% during the forecast period.
Gallium nitride (GaN) is a wide bandgap material that offers significant advantages in high-power radio frequency (RF) applications. Gallium nitride (GaN) is a wide bandgap material that offers significant advantages in high-power radio frequency (RF) applications.
This report aims to provide a comprehensive presentation of the global market for RF GaN Semiconductor Device, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding RF GaN Semiconductor Device. This report contains market size and forecasts of RF GaN Semiconductor Device in global, including the following market information:
- Global RF GaN Semiconductor Device Market Revenue, 2018-2023, 2024-2029, ($ millions)
- Global RF GaN Semiconductor Device Market Sales, 2018-2023, 2024-2029, (K Units)
- Global top five RF GaN Semiconductor Device companies in 2022 (%)
The U.S. Market is Estimated at $ Million in 2022, While China is Forecast to Reach $ Million.
GaN-On-SiC Segment to Reach $ Million by 2029, with a % CAGR in next six years.
The global key manufacturers of RF GaN Semiconductor Device include Sumitomo Electric Industries, Ltd, Raytheon Company, Robert Bosch GmbH, STMicroelectronics, Hitachi, Ltd, Toshiba Corporation, Mitsubishi Electric Corporation, Infineon Technologies AG and Renesas Electronics Corporation, etc. in 2022, the global top five players have a share approximately % in terms of revenue.
We surveyed the RF GaN Semiconductor Device manufacturers, suppliers, distributors and industry experts on this industry, involving the sales, revenue, demand, price change, product type, recent development and plan, industry trends, drivers, challenges, obstacles, and potential risks.
Total Market by Segment:
Global RF GaN Semiconductor Device Market, by Type, 2018-2023, 2024-2029 ($ Millions) & (K Units)
Global RF GaN Semiconductor Device Market Segment Percentages, by Type, 2022 (%)
- GaN-On-SiC
- GaN-On-Silicon
- GaN-On-Diamond
Global RF GaN Semiconductor Device Market, by Application, 2018-2023, 2024-2029 ($ Millions) & (K Units)
Global RF GaN Semiconductor Device Market Segment Percentages, by Application, 2022 (%)
- Aerospace & Defense
- Telecom
- Consumer Electronics
- Automotive
- Others
Global RF GaN Semiconductor Device Market, By Region and Country, 2018-2023, 2024-2029 ($ Millions) & (K Units)
Global RF GaN Semiconductor Device Market Segment Percentages, By Region and Country, 2022 (%)
- North America
- US
- Canada
- Mexico
- Europe
- Germany
- France
- U.K.
- Italy
- Russia
- Nordic Countries
- Benelux
- Rest of Europe
- Asia
- China
- Japan
- South Korea
- Southeast Asia
- India
- Rest of Asia
- South America
- Brazil
- Argentina
- Rest of South America
- Middle East & Africa
- Turkey
- Israel
- Saudi Arabia
- UAE
- Rest of Middle East & Africa
Competitor Analysis
The report also provides analysis of leading market participants including:
- Key companies RF GaN Semiconductor Device revenues in global market, 2018-2023 (Estimated), ($ millions)
- Key companies RF GaN Semiconductor Device revenues share in global market, 2022 (%)
- Key companies RF GaN Semiconductor Device sales in global market, 2018-2023 (Estimated), (K Units)
- Key companies RF GaN Semiconductor Device sales share in global market, 2022 (%)
key players include:
- Sumitomo Electric Industries, Ltd
- Raytheon Company
- Robert Bosch GmbH
- STMicroelectronics
- Hitachi, Ltd
- Toshiba Corporation
- Mitsubishi Electric Corporation
- Infineon Technologies AG
- Renesas Electronics Corporation
- Panasonic Corporation
- Microchip Technology
- Aethercomm Inc.
- Cree, Inc.
- NXP Semiconductor
- Analog Devices Inc.
- ROHM Semiconductors
- Qorvo Inc.
Outline of Major Chapters:
Chapter 1: Introduces the definition of RF GaN Semiconductor Device, market overview.
Chapter 2: Global RF GaN Semiconductor Device market size in revenue and volume.
Chapter 3: Detailed analysis of RF GaN Semiconductor Device manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 4: Provides the analysis of various market segments by type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 5: Provides the analysis of various market segments by application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 6: Sales of RF GaN Semiconductor Device in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space of each country in the world.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Global RF GaN Semiconductor Device capacity by region & country.
Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 10: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 11: The main points and conclusions of the report.
