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STT-RAM (Spin-Transfer-Torque RAM) Market, Global Outlook and Forecast 2023-2030

STTRAM is a type of MRAM which is based on magnetic tunnel junctions (MTJs), with the configuration of 1T1MTJ. In MTJ, two ferromagnetic (FM) layers?one has fixed magnetic orientation, and the other has free magnetic orientation?are usually separated by a tunnel oxide barrier. The parallel magnetic orientation of both FM layers (typically 1?2 nm MgO) is the LRS of the cell, and the anti-parallel magnetic alignment switches the cell in HRS. As compared to typical MRAM design, STTRAM has high scalability , simple architecture, lower power consumption, and faster operation
This report aims to provide a comprehensive presentation of the global market for STT-RAM (Spin-Transfer-Torque RAM), with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding STT-RAM (Spin-Transfer-Torque RAM). This report contains market size and forecasts of STT-RAM (Spin-Transfer-Torque RAM) in global, including the following market information:
Global STT-RAM (Spin-Transfer-Torque RAM) Market Revenue, 2018-2023, 2024-2030, ($ millions)
Global STT-RAM (Spin-Transfer-Torque RAM) Market Sales, 2018-2023, 2024-2030, (K Units)
Global top five STT-RAM (Spin-Transfer-Torque RAM) companies in 2022 (%)
The global STT-RAM (Spin-Transfer-Torque RAM) market was valued at US$ million in 2022 and is projected to reach US$ million by 2029, at a CAGR of % during the forecast period. The influence of COVID-19 and the Russia-Ukraine War were considered while estimating market sizes.
The U.S. Market is Estimated at $ Million in 2022, While China is Forecast to Reach $ Million.
1T1MTJ Segment to Reach $ Million by 2029, with a % CAGR in next six years.
The global key manufacturers of STT-RAM (Spin-Transfer-Torque RAM) include Everspin Technologies, Buffalo, Intel, Crocus Nano Electronics, Avalanche Technology, Crocus Technology, Spin Memory, IBM and Qaulcomm, etc. in 2022, the global top five players have a share approximately % in terms of revenue.
MARKET MONITOR GLOBAL, INC (MMG) has surveyed the STT-RAM (Spin-Transfer-Torque RAM) manufacturers, suppliers, distributors and industry experts on this industry, involving the sales, revenue, demand, price change, product type, recent development and plan, industry trends, drivers, challenges, obstacles, and potential risks.
Total Market by Segment:
Global STT-RAM (Spin-Transfer-Torque RAM) Market, by Type, 2018-2023, 2024-2030 ($ Millions) & (K Units)
Global STT-RAM (Spin-Transfer-Torque RAM) Market Segment Percentages, by Type, 2022 (%)
1T1MTJ
Perpendicular MTJ
Global STT-RAM (Spin-Transfer-Torque RAM) Market, by Application, 2018-2023, 2024-2030 ($ Millions) & (K Units)
Global STT-RAM (Spin-Transfer-Torque RAM) Market Segment Percentages, by Application, 2022 (%)
Mobile and Consumer
Automotive
Industrial
Data Center
Global STT-RAM (Spin-Transfer-Torque RAM) Market, By Region and Country, 2018-2023, 2024-2030 ($ Millions) & (K Units)
Global STT-RAM (Spin-Transfer-Torque RAM) Market Segment Percentages, By Region and Country, 2022 (%)
North America
US
Canada
Mexico
Europe
Germany
France
U.K.
Italy
Russia
Nordic Countries
Benelux
Rest of Europe
Asia
China
Japan
South Korea
Southeast Asia
India
Rest of Asia
South America
Brazil
Argentina
Rest of South America
Middle East & Africa
Turkey
Israel
Saudi Arabia
UAE
Rest of Middle East & Africa
Competitor Analysis
The report also provides analysis of leading market participants including:
Key companies STT-RAM (Spin-Transfer-Torque RAM) revenues in global market, 2018-2023 (Estimated), ($ millions)
Key companies STT-RAM (Spin-Transfer-Torque RAM) revenues share in global market, 2022 (%)
Key companies STT-RAM (Spin-Transfer-Torque RAM) sales in global market, 2018-2023 (Estimated), (K Units)
Key companies STT-RAM (Spin-Transfer-Torque RAM) sales share in global market, 2022 (%)
Further, the report presents profiles of competitors in the market, key players include:
Everspin Technologies
Buffalo
Intel
Crocus Nano Electronics
Avalanche Technology
Crocus Technology
Spin Memory
IBM
Qaulcomm
Samsung
Outline of Major Chapters:
Chapter 1: Introduces the definition of STT-RAM (Spin-Transfer-Torque RAM), market overview.
Chapter 2: Global STT-RAM (Spin-Transfer-Torque RAM) market size in revenue and volume.
Chapter 3: Detailed analysis of STT-RAM (Spin-Transfer-Torque RAM) manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 4: Provides the analysis of various market segments by type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 5: Provides the analysis of various market segments by application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 6: Sales of STT-RAM (Spin-Transfer-Torque RAM) in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space of each country in the world.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Global STT-RAM (Spin-Transfer-Torque RAM) capacity by region & country.
Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 10: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 11: The main points and conclusions of the report.